? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 53 a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c60a e as t c = 25 c3j p d t c = 25 c 735 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 5 ma r ds(on) v gs = 10v, i d = 30a note 1 100 m linear l2 tm power mosfet n-channel enhancement mode extended fbsoa IXTN60N50L2 v dss = 500v i d25 = 53a r ds(on) 100m ds100086(12/08) features ? designed for linear operation ? international standard package ? molding epoxy meets ul94 v-0 flammability classification ? minibloc with aluminium nitride isolation applications ? programmable loads ? current regulators ? dc-dc converters ? battery chargers ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space savings ? high power density preliminary technical information either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. minibloc, sot-227 e153432 g d s s g = gate d = drain s = source
ixys reserves the right to change limits, test conditions, and dimensions. IXTN60N50L2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. sot-227b (ixtn) outline (m4 screws (4x) supplied) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 30a, note 1 18 25 32 s c iss 24 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1325 pf c rss 172 pf t d(on) 40 ns t r 40 ns t d(off) 165 ns t f 38 ns q g(on) 610 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 30a 130 nc q gd 365 nc r thjc 0.17 c/w r thcs 0.05 c/w safe operating area specification symbol test conditions min. typ. max. soa v ds = 400v, i d = 0.9a, t c = 75c, tp = 3s 360 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 60 a i sm repetitive, pulse width limited by t jm 240 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 980 ns i rm 73 a q rm 35.8 c resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 30a r g = 0.5 (external) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. i f = 60a, -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2008 ixys corporation, all rights reserved IXTN60N50L2 fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds - volts i d - amperes v gs = 20v 14v 12v 10v 7 v 8 v 5 v 6 v 9 v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 20v 14v 12v 7 v 6 v 9 v 10 v 8 v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 60 012345678910 v ds - volts i d - amperes v gs = 20v 12v 10v 9v 6 v 8v 7v 5 v fig. 4. r ds(on) normalized to i d = 30a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 60a i d = 30a fig. 5. r ds(on) normalized to i d = 30a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 20 40 60 80 100 120 140 160 i d - amperes r ds(on) - normalized v gs = 10v 20v - - - - t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 55 60 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes ixys ref: t_60n50l2(9r)01-20-09-c
ixys reserves the right to change limits, test conditions, and dimensions. IXTN60N50L2 fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 0 102030405060708090100110 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 200 0.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 900 q g - nanocoulombs v gs - volts v ds = 250v i d = 30a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved IXTN60N50L2 ixys ref: t_60n50l2(9r)01-20-09-c fig. 13. forward-bias safe operating area @ t c = 25oc 0.1 1.0 10.0 100.0 1,000.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms 100ms dc fig. 14. forward-bias safe operating area @ t c = 75oc 0.1 1.0 10.0 100.0 1,000.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 10ms 100ms dc
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